2N5758
- Mfr.Part #
- 2N5758
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 3,839
- In Stock :
- 3,839
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-204AA
- Surface Mount :
- No
- Product Status :
- Active
- Collector-Emitter Voltage-Max :
- 100 V
- Supplier Device Package :
- TO-204AD (TO-3)
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Power Dissipation Ambient-Max :
- 150 W
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- NPN
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- Technology :
- Si
- Current - Collector Cutoff (Max) :
- -
- Package Shape :
- Round
- Operating Temperature :
- -
- Number of Terminals :
- 2
- Reach Compliance Code :
- Unknown
- Frequency - Transition :
- -
- Transistor Element Material :
- SILICON
- Series :
- -
- JESD-30 Code :
- O-MBFM-P2
- Package / Case :
- TO-204AA, TO-3
- Polarity/Channel Type :
- NPN
- Terminal Form :
- PIN/PEG
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 6 A
- DC Current Gain-Min (hFE) :
- 5
- VCEsat-Max :
- 2 V
- Collector Current-Max (IC) :
- 6 A
- Manufacturer :
- Motorola Semiconductor Products
- Collector-Base Capacitance-Max :
- 300 pF
- Power - Max :
- 150 W
- Vce Saturation (Max) @ Ib, Ic :
- -
- Package :
- Bulk
- Qualification Status :
- Not Qualified
- Datasheets
- 2N5758
NPN - - 1 Elements SILICON NPN TO-204AA, TO-3 Through Hole
2N5758 Overview
This device has a DC current gain of -, which is the ratio between the base current and the collector current.A VCE saturation (Max) of - means Ic has reached its maximum value(saturated).Product package TO-204AD (TO-3) comes from the supplier.100 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 100 VV - Maximum voltage.
2N5758 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-204AD (TO-3)
2N5758 Applications
There are a lot of Microchip Technology
2N5758 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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