2N5210TF
- Mfr.Part #
- 2N5210TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 22,958
- In Stock :
- 22,958
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Pbfree Code :
- yes
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Additional Feature :
- LOW NOISE
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Frequency - Transition :
- 30MHz
- Transition Frequency :
- 30MHz
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Power - Max :
- 625mW
- JESD-30 Code :
- O-PBCY-T3
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Terminal Finish :
- MATTE TIN
- Current - Collector (Ic) (Max) :
- 100mA
- Qualification Status :
- COMMERCIAL
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Datasheets
- 2N5210TF

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5210TF Overview
In this device, the DC current gain is 200 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 1mA, 10mA.30MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.
2N5210TF Features
the DC current gain for this device is 200 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
a transition frequency of 30MHz
2N5210TF Applications
There are a lot of Rochester Electronics, LLC
2N5210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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