2N5209 PBFREE
- Mfr.Part #
- 2N5209 PBFREE
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.05A TO92-3
- Stock
- 5,327
- In Stock :
- 5,327
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Factory Lead Time :
- 6 Weeks
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Current - Collector (Ic) (Max) :
- 50mA
- Power - Max :
- 350mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 30MHz
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -65°C~150°C TJ
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100μA 5V
- Datasheets
- 2N5209 PBFREE
NPN -65°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5209 PBFREE Overview
This device has a DC current gain of 100 @ 100μA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
2N5209 PBFREE Features
the DC current gain for this device is 100 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
2N5209 PBFREE Applications
There are a lot of Central Semiconductor Corp
2N5209 PBFREE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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