2N5210BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2002

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Terminal Finish :

Tin (Sn)

Factory Lead Time :

6 Weeks

Packaging :

Bulk

Polarity/Channel Type :

NPN

Pbfree Code :

yes

Element Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Mounting Type :

Through Hole

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100μA 5V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power Dissipation :

625mW

Base Part Number :

2N5210

Height :

5.33mm

Mount :

Through Hole

Voltage - Rated DC :

50V

Vce Saturation (Max) @ Ib, Ic :

700mV @ 1mA, 10mA

Current Rating :

100mA

Transition Frequency :

30MHz

Number of Pins :

3

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

50V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Elements :

1

Weight :

179mg

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

700mV

hFE Min :

200

Width :

4.19mm

Number of Terminations :

3

Length :

5.2mm

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

4.5V

Max Collector Current :

100mA

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Gain Bandwidth Product :

30MHz

Frequency :

30MHz

Max Power Dissipation :

625mW