2N5210BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

Number of Terminations :

3

Voltage - Rated DC :

50V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

BOTTOM

Transition Frequency :

30MHz

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Power Dissipation :

625mW

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

50V

Collector Emitter Saturation Voltage :

700mV

Length :

5.2mm

REACH SVHC :

No SVHC

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Bulk

Collector Emitter Breakdown Voltage :

50V

Width :

4.19mm

Number of Elements :

1

Published :

2002

Weight :

179mg

Emitter Base Voltage (VEBO) :

4.5V

JESD-609 Code :

e3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Base Part Number :

2N5210

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

50nA

Height :

5.33mm

Element Configuration :

Single

Radiation Hardening :

No

Lead Free :

Lead Free

Gain Bandwidth Product :

30MHz

Transistor Application :

AMPLIFIER

Max Collector Current :

100mA

Number of Pins :

3

Pbfree Code :

yes

Frequency :

30MHz

hFE Min :

200

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100μA 5V

Current Rating :

100mA

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

700mV @ 1mA, 10mA