2N5210NMBU
- Mfr.Part #
- 2N5210NMBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 9,162
- In Stock :
- 9,162
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency - Transition :
- 30MHz
- Power - Max :
- 625mW
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number :
- 2N5210
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Datasheets
- 2N5210NMBU
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5210NMBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100μA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N5210NMBU Features
the DC current gain for this device is 200 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
2N5210NMBU Applications
There are a lot of ON Semiconductor
2N5210NMBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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