2N5210TF
- Mfr.Part #
- 2N5210TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 12,829
- In Stock :
- 12,829
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Power - Max :
- 625mW
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN
- Configuration :
- Single
- Frequency - Transition :
- 30MHz
- Transistor Type :
- NPN
- Surface Mount :
- No
- JESD-30 Code :
- O-PBCY-T3
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Transition Frequency :
- 30MHz
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Current - Collector (Ic) (Max) :
- 100mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Additional Feature :
- LOW NOISE
- Mounting Type :
- Through Hole
- Qualification Status :
- COMMERCIAL
- Datasheets
- 2N5210TF

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5210TF Overview
In this device, the DC current gain is 200 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 1mA, 10mA.30MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.
2N5210TF Features
the DC current gain for this device is 200 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
a transition frequency of 30MHz
2N5210TF Applications
There are a lot of Rochester Electronics, LLC
2N5210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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