2N5210TA
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- Mfr.Part #
- 2N5210TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 39,930
- In Stock ：
- 39,930
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- hFE Min :
- 200
- Height :
- 5.33mm
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Length :
- 5.2mm
- Mounting Type :
- Through Hole
- Frequency :
- 30MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 100mA
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4.5V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Power Dissipation :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Width :
- 4.19mm
- Voltage - Rated DC :
- 50V
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Elements :
- 1
- Base Part Number :
- 2N5210
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Gain Bandwidth Product :
- 30MHz
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 6 Weeks
- Transition Frequency :
- 30MHz
- Max Breakdown Voltage :
- 45V
- Current Rating :
- 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Published :
- 2002
- Weight :
- 240mg
- JESD-609 Code :
- e3
- Packaging :
- Tape and Box (TB)
- Datasheets
- 2N5210TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5210TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
2N5210TA Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz
2N5210TA Applications
There are a lot of ON Semiconductor
2N5210TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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