2N3866

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

1W

Max Collector Current :

400mA

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Pin Count :

3

Number of Elements :

1

Emitter Base Voltage (VEBO) :

3.5V

Packaging :

Bulk

Current - Collector Cutoff (Max) :

20μA

Transition Frequency :

400MHz

ECCN Code :

EAR99

Transistor Type :

NPN

Mount :

Through Hole

Max Breakdown Voltage :

30V

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

Single

RoHS Status :

Non-RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 50mA 5V

Polarity/Channel Type :

NPN

Published :

2007

Number of Terminations :

3

Frequency :

800MHz

Collector Emitter Breakdown Voltage :

30V

Vce Saturation (Max) @ Ib, Ic :

1V @ 10mA, 100mA

Package / Case :

TO-205AD, TO-39-3 Metal Can

Pbfree Code :

No

Power Dissipation :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Collector Base Voltage (VCBO) :

60V

Operating Temperature :

-65°C~200°C TJ

Terminal Form :

Wire

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

JESD-609 Code :

e0