2N3416_D29Z
- Mfr.Part #
- 2N3416_D29Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO92-3
- Stock
- 4,351
- In Stock :
- 4,351
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 2mA 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Current - Collector (Ic) (Max) :
- 500mA
- Base Part Number :
- 2N3416
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Power - Max :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Supplier Device Package :
- TO-92-3
- Datasheets
- 2N3416_D29Z

NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3416_D29Z Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 2mA 4.5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N3416_D29Z Features
the DC current gain for this device is 75 @ 2mA 4.5V
the vce saturation(Max) is 300mV @ 3mA, 50mA
the supplier device package of TO-92-3
2N3416_D29Z Applications
There are a lot of ON Semiconductor
2N3416_D29Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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