2N3416
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- Mfr.Part #
- 2N3416
- Manufacturer
- Harris Corporation
- Package / Case
- TO-92
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO92-3
- Stock
- 22,649
- In Stock ：
- 22,649
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation-Max :
- 625mW
- Voltage :
- 50V
- Package / Case :
- TO-92
- HTS Code :
- 8541.21.00.95
- Element Configuration :
- Single
- Current :
- 5A
- Polarity :
- NPN
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e0
- Additional Feature :
- LOW NOISE
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Max Operating Temperature :
- 150°C
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-92
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- --
- JESD-30 Code :
- O-PBCY-T3
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- --
- hFE Min :
- 180
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 50V
- Continuous Collector Current :
- 450mA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 2mA, 4.5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Factory Lead Time :
- 8 Weeks
- Min Operating Temperature :
- -65°C
- Max Collector Current :
- 100nA
- Published :
- 2012
- Pin Count :
- 3
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 300mV
- Frequency - Transition :
- --
- Lead Free :
- Lead Free
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Datasheets
- 2N3416
,TO-226_straightlead.jpg)
NPN -65°C ~ 150°C (TJ) 100nA (ICBO) 1 Elements 3 Terminations TO-92 Bulk Through Hole
2N3416 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 2mA, 4.5V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is --.In order to achieve high efficiency, the continuous collector voltage should be kept at 450mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-92.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 100nA volts at its maximum.
2N3416 Features
the DC current gain for this device is 75 @ 2mA, 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is --
the emitter base voltage is kept at 5V
the supplier device package of TO-92
2N3416 Applications
There are a lot of Central Semiconductor
2N3416 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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