2N3416_D74Z
- Mfr.Part #
- 2N3416_D74Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO92-3
- Stock
- 10,584
- In Stock :
- 10,584
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power - Max :
- 625mW
- Supplier Device Package :
- TO-92-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 2mA 4.5V
- Base Part Number :
- 2N3416
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N3416_D74Z

NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3416_D74Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 2mA 4.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 3mA, 50mA.TO-92-3 is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2N3416_D74Z Features
the DC current gain for this device is 75 @ 2mA 4.5V
the vce saturation(Max) is 300mV @ 3mA, 50mA
the supplier device package of TO-92-3
2N3416_D74Z Applications
There are a lot of ON Semiconductor
2N3416_D74Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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