2N3415_D26Z
- Mfr.Part #
- 2N3415_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.5A TO92-3
- Stock
- 44,413
- In Stock :
- 44,413
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 4.5V
- Base Part Number :
- 2N3415
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Mounting Type :
- Through Hole
- Datasheets
- 2N3415_D26Z

NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3415_D26Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 4.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 3mA, 50mA.This device displays a 25V maximum voltage - Collector Emitter Breakdown.
2N3415_D26Z Features
the DC current gain for this device is 180 @ 2mA 4.5V
the vce saturation(Max) is 300mV @ 3mA, 50mA
2N3415_D26Z Applications
There are a lot of ON Semiconductor
2N3415_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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