2N3417
- Mfr.Part #
- 2N3417
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-92
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO92-3
- Stock
- 64,563
- In Stock :
- 64,563
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- --
- Continuous Collector Current :
- 450mA
- Collector Base Voltage (VCBO) :
- 50V
- HTS Code :
- 8541.21.00.95
- Collector Emitter Voltage (VCEO) :
- 5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Operating Temperature :
- 150°C
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Saturation Voltage :
- 300mV
- Qualification Status :
- Not Qualified
- Additional Feature :
- LOW NOISE
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 625mW
- Number of Terminations :
- 3
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA, 4.5V
- Max Collector Current :
- 100nA
- hFE Min :
- 180
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Frequency - Transition :
- --
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-92
- Transistor Type :
- NPN
- Mount :
- Through Hole
- JESD-30 Code :
- O-PBCY-T3
- Series :
- --
- Factory Lead Time :
- 8 Weeks
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Supplier Device Package :
- TO-92
- Published :
- 2012
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Polarity :
- NPN
- DC Current Gain-Min (hFE) :
- 180
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Element Configuration :
- Single
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Min Operating Temperature :
- -65°C
- Datasheets
- 2N3417
2N3417 Documents

NPN -65°C ~ 150°C (TJ) 100nA (ICBO) 1 Elements 3 Terminations TO-92 Bulk Through Hole
2N3417 Overview
This device has a DC current gain of 180 @ 2mA, 4.5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 450mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-92.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.The maximum collector current is 100nA volts.
2N3417 Features
the DC current gain for this device is 180 @ 2mA, 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is --
the emitter base voltage is kept at 5V
the supplier device package of TO-92
2N3417 Applications
There are a lot of Central Semiconductor
2N3417 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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