23A008

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 5V

Transistor Type :

NPN

ECCN Code :

EAR99

Configuration :

Single

JESD-609 Code :

e0

Max Collector Current :

400mA

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 months ago)

Mounting Type :

Chassis Mount

Number of Elements :

1

Additional Feature :

High Reliability

Max Power Dissipation :

5W

Frequency :

3.7GHz

Packaging :

Bulk

JESD-30 Code :

R-CDFM-F2

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

22V

Power Dissipation :

5W

Collector Emitter Breakdown Voltage :

22V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

3.5V

Pin Count :

2

Transition Frequency :

3700MHz

Package / Case :

55BT

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Terminal Position :

Dual

Number of Pins :

55

Current - Collector (Ic) (Max) :

400mA

Terminal Form :

Flat

Pbfree Code :

No

RoHS Status :

RoHS Compliant

Operating Temperature :

200°C TJ

Gain :

8.5dB ~ 9.5dB