23A008

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

22V

Pbfree Code :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 5V

Emitter Base Voltage (VEBO) :

3.5V

Terminal Position :

Dual

JESD-609 Code :

e0

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Polarity/Channel Type :

NPN

Power Dissipation :

5W

Terminal Form :

Flat

Transition Frequency :

3700MHz

RoHS Status :

RoHS Compliant

Gain :

8.5dB ~ 9.5dB

Additional Feature :

High Reliability

Mounting Type :

Chassis Mount

Packaging :

Bulk

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 months ago)

Current - Collector (Ic) (Max) :

400mA

Mount :

Chassis Mount, Screw

Transistor Element Material :

SILICON

Transistor Type :

NPN

Package / Case :

55BT

JESD-30 Code :

R-CDFM-F2

Contact Plating :

Tin

Frequency :

3.7GHz

Pin Count :

2

Max Power Dissipation :

5W

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Max Collector Current :

400mA

Operating Temperature :

200°C TJ

Configuration :

Single

Number of Terminations :

2

Collector Emitter Voltage (VCEO) :

22V

Number of Pins :

55