23A005

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Highest Frequency Band :

S B

Number of Elements :

1

Pbfree Code :

No

Terminal Position :

Dual

Terminal Form :

Flat

Configuration :

Single

Transition Frequency :

4300MHz

Contact Plating :

Tin

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Number of Pins :

55

Max Power Dissipation :

3W

Frequency - Transition :

4.3GHz

Number of Terminations :

2

Published :

1997

Collector Emitter Breakdown Voltage :

22V

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Gain :

8.5dB ~ 9.5dB

Collector Emitter Voltage (VCEO) :

22V

Operating Temperature :

200°C TJ

Additional Feature :

High Reliability

Collector-Base Capacitance-Max :

3pF

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 5V

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-CDFM-F2

Package / Case :

55BT

Max Collector Current :

400mA

RoHS Status :

RoHS Compliant

Power - Max :

3W

Mounting Type :

Chassis Mount

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 months ago)

ECCN Code :

EAR99

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

Mount :

Chassis Mount, Screw