ZXMHC3A01N8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

2.17A 1.64A

Drain Current-Max (Abs) (ID) :

2.17A

Number of Pins :

8

Rise Time :

2.3ns

Height :

1.5mm

ECCN Code :

EAR99

Mount :

Surface Mount

Power Dissipation :

1.36W

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

12.1 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

17 Weeks

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Weight :

73.992255mg

Base Part Number :

ZXMHC3A01

Continuous Drain Current (ID) :

1.64A

Published :

2009

Fall Time (Typ) :

2.9 ns

Mounting Type :

Surface Mount

Length :

5mm

Terminal Position :

Dual

FET Feature :

Logic Level Gate

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.5A, 10V

Radiation Hardening :

No

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

4

Peak Reflow Temperature (Cel) :

260

Resistance :

125mOhm

Number of Terminations :

8

Max Power Dissipation :

870mW

Width :

4mm

JESD-609 Code :

e3

FET Type :

2 N and 2 P-Channel (H-Bridge)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V