ZXMHC10A07T8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

1A

JESD-609 Code :

e3

Turn On Delay Time :

1.6 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Standard

Pbfree Code :

yes

Length :

6.7mm

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

ZXMHC10A07T8

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

3.3 ns

FET Type :

2 N and 2 P-Channel (H-Bridge)

Rds On (Max) @ Id, Vgs :

700m Ω @ 1.5A, 10V

Height :

1.6mm

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

1Ohm

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

100V

Width :

3.7mm

Transistor Element Material :

SILICON

Max Power Dissipation :

1.3W

Rise Time :

2.1ns

Factory Lead Time :

17 Weeks

Package / Case :

8-SMD, Gull Wing

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

1.1A

RoHS Status :

ROHS3 Compliant

Current Rating :

1.4A

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 10V

Lead Free :

Lead Free

Number of Pins :

8

Pin Count :

8

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

1A 800mA

Number of Elements :

4

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

138pF @ 60V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mount :

Surface Mount

Turn-Off Delay Time :

5.9 ns

Power Dissipation :

1.3W

Published :

2006

Mounting Type :

Surface Mount