ZXMHC10A07N8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Terminations :

8

Continuous Drain Current (ID) :

1A

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

3.3 ns

Rise Time :

2.1ns

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.7Ohm

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

17 Weeks

Max Power Dissipation :

870mW

Input Capacitance (Ciss) (Max) @ Vds :

138pF @ 60V

Operating Temperature :

-55°C~150°C TJ

Height :

1.5mm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power Dissipation :

1.36W

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Width :

4mm

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

5.9 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Length :

5mm

Pbfree Code :

yes

Published :

2009

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N and 2 P-Channel (H-Bridge)

Weight :

73.992255mg

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

1A

Transistor Application :

SWITCHING

Pin Count :

8

Drain to Source Breakdown Voltage :

-100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Part Number :

ZXMHC10A07

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

800mA 680mA

Rds On (Max) @ Id, Vgs :

700m Ω @ 1.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

100V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

1.6 ns

Number of Elements :

4

Radiation Hardening :

No

Terminal Form :

Gull wing