ZX5T955GTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2004

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Factory Lead Time :

12 Weeks

Width :

3.7mm

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Pin Count :

4

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

180V

Polarity/Channel Type :

PNP

Pbfree Code :

No

Transistor Type :

PNP

Max Power Dissipation :

3W

Number of Pins :

4

ECCN Code :

EAR99

JESD-609 Code :

e3

Base Part Number :

ZX5T955

Mount :

Surface Mount

Radiation Hardening :

No

Element Configuration :

Single

Weight :

7.994566mg

Collector Emitter Breakdown Voltage :

140V

Emitter Base Voltage (VEBO) :

7V

Frequency :

120MHz

Number of Elements :

1

Number of Terminations :

4

Length :

6.7mm

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

120MHz

Current - Collector Cutoff (Max) :

20nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

4A

Collector Emitter Voltage (VCEO) :

140V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

120MHz

hFE Min :

100

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

360mV @ 300mA, 3A

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-261-4, TO-261AA

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

Power Dissipation :

3W

REACH SVHC :

No SVHC

Height :

1.7mm

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260