ZX5T851GTA
- Mfr.Part #
- ZX5T851GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A SOT223-3
- Stock
- 119,680
- In Stock :
- 119,680
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Termination :
- SMD/SMT
- Transition Frequency :
- 130MHz
- Number of Pins :
- 4
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- ZX5T851
- Collector Emitter Saturation Voltage :
- 260mV
- Max Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Finish :
- Matte Tin (Sn)
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Gain Bandwidth Product :
- 130MHz
- Pin Count :
- 4
- Current Rating :
- 6A
- Transistor Application :
- SWITCHING
- Length :
- 6.7mm
- Pbfree Code :
- No
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.7mm
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 6A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Element Configuration :
- Single
- Weight :
- 7.994566mg
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 60V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 300mA, 6A
- Collector Base Voltage (VCBO) :
- 150V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Collector Emitter Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- 6A
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Published :
- 2013
- REACH SVHC :
- No SVHC
- Height :
- 1.65mm
- Transistor Element Material :
- SILICON
- hFE Min :
- 55
- Max Power Dissipation :
- 3W
- Frequency :
- 130MHz
- Power Dissipation :
- 3W
- Datasheets
- ZX5T851GTA

NPN -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T851GTA Overview
DC current gain in this device equals 100 @ 2A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 260mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 300mA, 6A.Single BJT transistor is essential to maintain the continuous collector voltage at 6A to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 6A current rating.As a result, the part has a transition frequency of 130MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 6A volts.
ZX5T851GTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZX5T851GTA Applications
There are a lot of Diodes Incorporated
ZX5T851GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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