ZX5T2E6TA
- Mfr.Part #
- ZX5T2E6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 20V 3.5A SOT23-6
- Stock
- 17,017
- In Stock :
- 17,017
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -25V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 20V
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 130mV @ 350mA, 3.5A
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- -3.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SOT-23-6
- Transistor Application :
- SWITCHING
- Published :
- 2004
- Height :
- 1.3mm
- Terminal Position :
- Dual
- Number of Pins :
- 6
- Width :
- 1.8mm
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 3.5A
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Pin Count :
- 6
- Length :
- 3.1mm
- Power - Max :
- 1.1W
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 130mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 110MHz
- Number of Terminations :
- 6
- Emitter Base Voltage (VEBO) :
- -7.5V
- Max Power Dissipation :
- 1.7W
- Base Part Number :
- UZX5T2E6
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 20V
- Radiation Hardening :
- No
- Weight :
- 14.996898mg
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Gain Bandwidth Product :
- 110MHz
- Datasheets
- ZX5T2E6TA

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZX5T2E6TA Overview
DC current gain in this device equals 300 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 350mA, 3.5A.Single BJT transistor is essential to maintain the continuous collector voltage at -3.5A to achieve high efficiency.An emitter's base voltage can be kept at -7.5V to gain high efficiency.As a result, the part has a transition frequency of 110MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZX5T2E6TA Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 130mV @ 350mA, 3.5A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz
ZX5T2E6TA Applications
There are a lot of Diodes Incorporated
ZX5T2E6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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