ZX5T2E6TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA

Continuous Collector Current :

-3.5A

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

110MHz

Weight :

14.996898mg

Number of Terminations :

6

Power - Max :

1.1W

Max Collector Current :

3.5A

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Max Breakdown Voltage :

20V

Pin Count :

6

Transistor Type :

PNP

Published :

2004

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

-25V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

UZX5T2E6

Vce Saturation (Max) @ Ib, Ic :

130mV @ 350mA, 3.5A

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

PNP

Max Power Dissipation :

1.7W

Collector Emitter Breakdown Voltage :

20V

Factory Lead Time :

16 Weeks

Transition Frequency :

110MHz

REACH SVHC :

No SVHC

Number of Pins :

6

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

130mV

Package / Case :

SOT-23-6

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Gull wing

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Emitter Base Voltage (VEBO) :

-7.5V

Height :

1.3mm

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Width :

1.8mm

Operating Temperature :

-55°C~150°C TJ

Length :

3.1mm