ZX5T2E6TA
- Mfr.Part #
- ZX5T2E6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 20V 3.5A SOT23-6
- Stock
- 17,017
- In Stock :
- 17,017
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 130mV
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Continuous Collector Current :
- -3.5A
- Collector Base Voltage (VCBO) :
- -25V
- Pin Count :
- 6
- Gain Bandwidth Product :
- 110MHz
- Length :
- 3.1mm
- Weight :
- 14.996898mg
- Vce Saturation (Max) @ Ib, Ic :
- 130mV @ 350mA, 3.5A
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 6
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 6
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -7.5V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- UZX5T2E6
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Transition Frequency :
- 110MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Published :
- 2004
- JESD-609 Code :
- e3
- Package / Case :
- SOT-23-6
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 20V
- Power - Max :
- 1.1W
- Max Breakdown Voltage :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Max Collector Current :
- 3.5A
- Height :
- 1.3mm
- Max Power Dissipation :
- 1.7W
- Width :
- 1.8mm
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- Terminal Form :
- Gull wing
- Datasheets
- ZX5T2E6TA

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZX5T2E6TA Overview
DC current gain in this device equals 300 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 350mA, 3.5A.Single BJT transistor is essential to maintain the continuous collector voltage at -3.5A to achieve high efficiency.An emitter's base voltage can be kept at -7.5V to gain high efficiency.As a result, the part has a transition frequency of 110MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZX5T2E6TA Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 130mV @ 350mA, 3.5A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz
ZX5T2E6TA Applications
There are a lot of Diodes Incorporated
ZX5T2E6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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