ZX5T2E6TA
- Mfr.Part #
- ZX5T2E6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 20V 3.5A SOT23-6
- Stock
- 17,017
- In Stock :
- 17,017
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SOT-23-6
- Emitter Base Voltage (VEBO) :
- -7.5V
- Transistor Application :
- SWITCHING
- Power - Max :
- 1.1W
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -25V
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 1.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Published :
- 2004
- Transition Frequency :
- 110MHz
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 3.1mm
- Weight :
- 14.996898mg
- Continuous Collector Current :
- -3.5A
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 6
- Width :
- 1.8mm
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 16 Weeks
- Collector Emitter Voltage (VCEO) :
- 130mV
- Mounting Type :
- Surface Mount
- Base Part Number :
- UZX5T2E6
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Pin Count :
- 6
- JESD-609 Code :
- e3
- Max Collector Current :
- 3.5A
- Max Breakdown Voltage :
- 20V
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 110MHz
- Vce Saturation (Max) @ Ib, Ic :
- 130mV @ 350mA, 3.5A
- Number of Pins :
- 6
- Max Power Dissipation :
- 1.7W
- Collector Emitter Breakdown Voltage :
- 20V
- Datasheets
- ZX5T2E6TA

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZX5T2E6TA Overview
DC current gain in this device equals 300 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 350mA, 3.5A.Single BJT transistor is essential to maintain the continuous collector voltage at -3.5A to achieve high efficiency.An emitter's base voltage can be kept at -7.5V to gain high efficiency.As a result, the part has a transition frequency of 110MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZX5T2E6TA Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 130mV @ 350mA, 3.5A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz
ZX5T2E6TA Applications
There are a lot of Diodes Incorporated
ZX5T2E6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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