ZX5T2E6TA
- Mfr.Part #
- ZX5T2E6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 20V 3.5A SOT23-6
- Stock
- 17,017
- In Stock :
- 17,017
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Power - Max :
- 1.1W
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 3.5A
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 130mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- UZX5T2E6
- Transistor Application :
- SWITCHING
- Height :
- 1.3mm
- Factory Lead Time :
- 16 Weeks
- Number of Pins :
- 6
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- -25V
- Emitter Base Voltage (VEBO) :
- -7.5V
- Width :
- 1.8mm
- Collector Emitter Breakdown Voltage :
- 20V
- Length :
- 3.1mm
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1.7W
- Transistor Type :
- PNP
- Continuous Collector Current :
- -3.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 130mV @ 350mA, 3.5A
- Published :
- 2004
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Terminations :
- 6
- Max Breakdown Voltage :
- 20V
- Package / Case :
- SOT-23-6
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Weight :
- 14.996898mg
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 110MHz
- Transition Frequency :
- 110MHz
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZX5T2E6TA

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZX5T2E6TA Overview
DC current gain in this device equals 300 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 350mA, 3.5A.Single BJT transistor is essential to maintain the continuous collector voltage at -3.5A to achieve high efficiency.An emitter's base voltage can be kept at -7.5V to gain high efficiency.As a result, the part has a transition frequency of 110MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZX5T2E6TA Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 130mV @ 350mA, 3.5A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz
ZX5T2E6TA Applications
There are a lot of Diodes Incorporated
ZX5T2E6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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