ZX5T2E6TA
- Mfr.Part #
- ZX5T2E6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 20V 3.5A SOT23-6
- Stock
- 17,017
- In Stock :
- 17,017
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.3mm
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1.7W
- Pbfree Code :
- yes
- Number of Terminations :
- 6
- Element Configuration :
- Single
- Pin Count :
- 6
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.1mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Emitter Base Voltage (VEBO) :
- -7.5V
- Gain Bandwidth Product :
- 110MHz
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- -25V
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- -3.5A
- Published :
- 2004
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 110MHz
- Factory Lead Time :
- 16 Weeks
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 130mV
- Max Breakdown Voltage :
- 20V
- Max Collector Current :
- 3.5A
- Mounting Type :
- Surface Mount
- Base Part Number :
- UZX5T2E6
- Vce Saturation (Max) @ Ib, Ic :
- 130mV @ 350mA, 3.5A
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Package / Case :
- SOT-23-6
- Weight :
- 14.996898mg
- Width :
- 1.8mm
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Power - Max :
- 1.1W
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- ZX5T2E6TA

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZX5T2E6TA Overview
DC current gain in this device equals 300 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 350mA, 3.5A.Single BJT transistor is essential to maintain the continuous collector voltage at -3.5A to achieve high efficiency.An emitter's base voltage can be kept at -7.5V to gain high efficiency.As a result, the part has a transition frequency of 110MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZX5T2E6TA Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 130mV @ 350mA, 3.5A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz
ZX5T2E6TA Applications
There are a lot of Diodes Incorporated
ZX5T2E6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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