ZX5T853GTA
- Mfr.Part #
- ZX5T853GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A SOT223-3
- Stock
- 634
- In Stock :
- 634
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Width :
- 3.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 3W
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Max Collector Current :
- 6A
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 200V
- Transition Frequency :
- 130MHz
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Collector Current :
- 6A
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2006
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 130MHz
- Transistor Type :
- NPN
- Weight :
- 7.994566mg
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 100V
- Power Dissipation :
- 3W
- Element Configuration :
- Single
- Base Part Number :
- ZX5T853
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 180mV
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 500mA, 5A
- Current Rating :
- 6A
- Height :
- 1.65mm
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Frequency :
- 130MHz
- Length :
- 6.7mm
- Max Breakdown Voltage :
- 100V
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Datasheets
- ZX5T853GTA

NPN -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T853GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 6A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 6A.In the part, the transition frequency is 130MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
ZX5T853GTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZX5T853GTA Applications
There are a lot of Diodes Incorporated
ZX5T853GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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