ZX5T853GTA
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- Mfr.Part #
- ZX5T853GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A SOT223-3
- Stock
- 634
- In Stock ：
- 634
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Weight :
- 7.994566mg
- Pbfree Code :
- No
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- ZX5T853
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 130MHz
- Max Power Dissipation :
- 3W
- Current Rating :
- 6A
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- 6A
- Frequency :
- 130MHz
- Collector Base Voltage (VCBO) :
- 200V
- Length :
- 6.7mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Number of Terminations :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 500mA, 5A
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Height :
- 1.65mm
- Max Collector Current :
- 6A
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 3W
- Collector Emitter Saturation Voltage :
- 180mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 130MHz
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2006
- JESD-609 Code :
- e3
- Width :
- 3.7mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Voltage - Rated DC :
- 100V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- ZX5T853GTA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T853GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 6A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 6A.In the part, the transition frequency is 130MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
ZX5T853GTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZX5T853GTA Applications
There are a lot of Diodes Incorporated
ZX5T853GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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