ZX5T853GTA
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- Mfr.Part #
- ZX5T853GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A SOT223-3
- Stock
- 634
- In Stock ：
- 634
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- ZX5T853
- Collector Emitter Saturation Voltage :
- 180mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Continuous Collector Current :
- 6A
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Number of Elements :
- 1
- Pin Count :
- 4
- Published :
- 2006
- Max Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Frequency :
- 130MHz
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 500mA, 5A
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 3W
- Width :
- 3.7mm
- Height :
- 1.65mm
- Length :
- 6.7mm
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Weight :
- 7.994566mg
- Max Power Dissipation :
- 3W
- Package / Case :
- TO-261-4, TO-261AA
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 200V
- Collector Emitter Breakdown Voltage :
- 100V
- Pbfree Code :
- No
- Transition Frequency :
- 130MHz
- Current Rating :
- 6A
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 6A
- Terminal Position :
- Dual
- Datasheets
- ZX5T853GTA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T853GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 6A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 6A.In the part, the transition frequency is 130MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
ZX5T853GTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZX5T853GTA Applications
There are a lot of Diodes Incorporated
ZX5T853GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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