ZX5T853GTA
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- Mfr.Part #
- ZX5T853GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A SOT223-3
- Stock
- 634
- In Stock ：
- 634
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 6A
- Number of Pins :
- 4
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Collector Emitter Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Published :
- 2006
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- 180mV
- Lead Free :
- Lead Free
- Transition Frequency :
- 130MHz
- ECCN Code :
- EAR99
- Power Dissipation :
- 3W
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-261-4, TO-261AA
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Length :
- 6.7mm
- Frequency :
- 130MHz
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- ZX5T853
- Pbfree Code :
- No
- Height :
- 1.65mm
- Max Power Dissipation :
- 3W
- Emitter Base Voltage (VEBO) :
- 7V
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 130MHz
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 200V
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 500mA, 5A
- Element Configuration :
- Single
- Continuous Collector Current :
- 6A
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 6A
- Voltage - Rated DC :
- 100V
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 4
- Mount :
- Surface Mount
- Width :
- 3.7mm
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Datasheets
- ZX5T853GTA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T853GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 6A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 6A.In the part, the transition frequency is 130MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
ZX5T853GTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZX5T853GTA Applications
There are a lot of Diodes Incorporated
ZX5T853GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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