ZX5T869GTA
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- Mfr.Part #
- ZX5T869GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 7A SOT223-3
- Stock
- 42,581
- In Stock ：
- 42,581
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 220mV
- Base Part Number :
- ZX5T869
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Current Rating :
- 7A
- Published :
- 2003
- Max Power Dissipation :
- 3W
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 7A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 1V
- Transition Frequency :
- 150MHz
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Voltage - Rated DC :
- 25V
- Continuous Collector Current :
- 7A
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 150MHz
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 150mA, 6.5A
- Collector Emitter Breakdown Voltage :
- 25V
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 25V
- Case Connection :
- COLLECTOR
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PDSO-G4
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Weight :
- 7.994566mg
- Lead Free :
- Contains Lead
- Datasheets
- ZX5T869GTA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T869GTA Overview
In this device, the DC current gain is 300 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 220mV @ 150mA, 6.5A.Maintaining the continuous collector voltage at 7A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (7A).150MHz is present in the transition frequency.An input voltage of 25V volts is the breakdown voltage.Maximum collector currents can be below 7A volts.
ZX5T869GTA Features
the DC current gain for this device is 300 @ 1A 1V
the vce saturation(Max) is 220mV @ 150mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 150MHz
ZX5T869GTA Applications
There are a lot of Diodes Incorporated
ZX5T869GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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