ZX5T955GTA
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- Mfr.Part #
- ZX5T955GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 140V 4A SOT223-3
- Stock
- 721
- In Stock ：
- 721
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -140V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Height :
- 1.7mm
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 120MHz
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Transition Frequency :
- 120MHz
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- -4A
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Max Breakdown Voltage :
- 140V
- Number of Pins :
- 4
- Number of Elements :
- 1
- Length :
- 6.7mm
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -360mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 180V
- JESD-609 Code :
- e3
- Weight :
- 7.994566mg
- Max Collector Current :
- 4A
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Pbfree Code :
- No
- Power Dissipation :
- 3W
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Max Power Dissipation :
- 3W
- Pin Count :
- 4
- Emitter Base Voltage (VEBO) :
- -7V
- Width :
- 3.7mm
- Package / Case :
- TO-261-4, TO-261AA
- Frequency :
- 120MHz
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- -4A
- Case Connection :
- COLLECTOR
- Base Part Number :
- ZX5T955
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage :
- 140V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 140V
- Polarity/Channel Type :
- PNP
- Datasheets
- ZX5T955GTA
ZX5T955GTA Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T955GTA Overview
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -360mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -4A to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 4A volts.
ZX5T955GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZX5T955GTA Applications
There are a lot of Diodes Incorporated
ZX5T955GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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