ZX5T955GTA
- Mfr.Part #
- ZX5T955GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 140V 4A SOT223-3
- Stock
- 721
- In Stock :
- 721
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- -7V
- Width :
- 3.7mm
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -4A
- Continuous Collector Current :
- -4A
- Pin Count :
- 4
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Weight :
- 7.994566mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Max Collector Current :
- 4A
- Max Breakdown Voltage :
- 140V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 180V
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Frequency :
- 120MHz
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.7mm
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 300mA, 3A
- Transition Frequency :
- 120MHz
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 120MHz
- Collector Emitter Saturation Voltage :
- -360mV
- Power Dissipation :
- 3W
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 140V
- Collector Emitter Breakdown Voltage :
- 140V
- Max Power Dissipation :
- 3W
- Base Part Number :
- ZX5T955
- Voltage - Rated DC :
- -140V
- Height :
- 1.7mm
- Datasheets
- ZX5T955GTA
ZX5T955GTA Documents

PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T955GTA Overview
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -360mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -4A to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 4A volts.
ZX5T955GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZX5T955GTA Applications
There are a lot of Diodes Incorporated
ZX5T955GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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