ZX5T955GTA
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- Mfr.Part #
- ZX5T955GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 140V 4A SOT223-3
- Stock
- 721
- In Stock ：
- 721
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 4
- Width :
- 3.7mm
- Collector Emitter Breakdown Voltage :
- 140V
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Max Collector Current :
- 4A
- Current Rating :
- -4A
- Collector Emitter Saturation Voltage :
- -360mV
- Emitter Base Voltage (VEBO) :
- -7V
- ECCN Code :
- EAR99
- Base Part Number :
- ZX5T955
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Frequency :
- 120MHz
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 300mA, 3A
- Terminal Position :
- Dual
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 140V
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 120MHz
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -140V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Height :
- 1.7mm
- Pbfree Code :
- No
- Published :
- 2006
- Gain Bandwidth Product :
- 120MHz
- Max Power Dissipation :
- 3W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Weight :
- 7.994566mg
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 180V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Power Dissipation :
- 3W
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Length :
- 6.7mm
- Collector Emitter Voltage (VCEO) :
- 140V
- Continuous Collector Current :
- -4A
- Datasheets
- ZX5T955GTA
ZX5T955GTA Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T955GTA Overview
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -360mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -4A to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 4A volts.
ZX5T955GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZX5T955GTA Applications
There are a lot of Diodes Incorporated
ZX5T955GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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