ZX5T949GTA
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- Mfr.Part #
- ZX5T949GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5.5A SOT223-3
- Stock
- 5,780
- In Stock ：
- 5,780
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 110MHz
- JESD-609 Code :
- e3
- Base Part Number :
- ZX5T949
- Transistor Type :
- PNP
- Pbfree Code :
- No
- Voltage - Rated DC :
- -30V
- Current Rating :
- -5.5A
- Package / Case :
- TO-261-4, TO-261AA
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 30V
- Pin Count :
- 4
- Gain Bandwidth Product :
- 110MHz
- Length :
- 6.7mm
- Collector Base Voltage (VCBO) :
- 50V
- Number of Pins :
- 4
- Lead Free :
- Lead Free
- Weight :
- 7.994566mg
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Transition Frequency :
- 110MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 5.5A
- Max Breakdown Voltage :
- 30V
- Height :
- 1.65mm
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Max Power Dissipation :
- 3W
- Polarity/Channel Type :
- PNP
- Width :
- 3.7mm
- Collector Emitter Saturation Voltage :
- 210mV
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 3W
- Factory Lead Time :
- 15 Weeks
- Published :
- 2003
- Continuous Collector Current :
- -5.5A
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 500mA, 5.5A
- Datasheets
- ZX5T949GTA
ZX5T949GTA Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T949GTA Overview
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation (Max) of 210mV @ 500mA, 5.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -5.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of -5.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 5.5A volts is possible.
ZX5T949GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZX5T949GTA Applications
There are a lot of Diodes Incorporated
ZX5T949GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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