ZX5T949GTA
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- Mfr.Part #
- ZX5T949GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5.5A SOT223-3
- Stock
- 5,780
- In Stock ：
- 5,780
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- No
- REACH SVHC :
- No SVHC
- Pin Count :
- 4
- Frequency :
- 110MHz
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Transition Frequency :
- 110MHz
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Width :
- 3.7mm
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Max Power Dissipation :
- 3W
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -30V
- Continuous Collector Current :
- -5.5A
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Case Connection :
- COLLECTOR
- Weight :
- 7.994566mg
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 500mA, 5.5A
- Length :
- 6.7mm
- Power Dissipation :
- 3W
- Element Configuration :
- Single
- Published :
- 2003
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Base Part Number :
- ZX5T949
- Gain Bandwidth Product :
- 110MHz
- Current Rating :
- -5.5A
- Collector Emitter Saturation Voltage :
- 210mV
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 5.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 1.65mm
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e3
- Datasheets
- ZX5T949GTA
ZX5T949GTA Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T949GTA Overview
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation (Max) of 210mV @ 500mA, 5.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -5.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of -5.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 5.5A volts is possible.
ZX5T949GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZX5T949GTA Applications
There are a lot of Diodes Incorporated
ZX5T949GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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