ZTX555STOA
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- Mfr.Part #
- ZTX555STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 150V 1A E-LINE
- Stock
- 17,492
- In Stock ：
- 17,492
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Qualification Status :
- Not Qualified
- Width :
- 2.41mm
- Continuous Collector Current :
- -1A
- Max Power Dissipation :
- 1W
- HTS Code :
- 8541.29.00.75
- Package / Case :
- E-Line-3, Formed Leads
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 1A
- Collector Emitter Saturation Voltage :
- -300mV
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 300mV
- Collector Emitter Breakdown Voltage :
- 150V
- Weight :
- 453.59237mg
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -150V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 300mA 10V
- Base Part Number :
- ZTX555
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Length :
- 4.77mm
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -160V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Current Rating :
- -1A
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSIP-W3
- Terminal Form :
- Wire
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Height :
- 4.01mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Through Hole
- Max Collector Current :
- 1A
- Datasheets
- ZTX555STOA
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX555STOA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 300mA 10V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
ZTX555STOA Features
the DC current gain for this device is 50 @ 300mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
ZTX555STOA Applications
There are a lot of Diodes Incorporated
ZTX555STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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