ZTX325STZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Wire

Published :

1997

Max Power Dissipation :

350mW

Transistor Application :

AMPLIFIER

Current Rating :

25mA

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

2.5V

Continuous Collector Current :

50mA

Base Part Number :

ZTX325

Packaging :

Tape and Box (TB)

Gain :

53dB

HTS Code :

8541.21.00.75

Width :

2.41mm

Length :

4.77mm

Gain Bandwidth Product :

1.3 GHz

Collector Emitter Breakdown Voltage :

15V

Pin Count :

3

Reach Compliance Code :

Unknown

Collector-Base Capacitance-Max :

0.85pF

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Mount :

Through Hole

Transition Frequency :

1300MHz

Weight :

453.59237mg

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~200°C TJ

RoHS Status :

RoHS Compliant

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 2mA 1V

Max Collector Current :

50mA

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

15V

Noise Figure (dB Typ @ f) :

5dB @ 500MHz

Height :

4.01mm

ECCN Code :

EAR99

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

E-Line-3, Formed Leads

Voltage - Rated DC :

15V

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PSIP-W3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

1.3GHz

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

30V

Transistor Type :

NPN

JESD-609 Code :

e3