UTV8100B

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Pins :

55

Terminal Finish :

TIN LEAD

Packaging :

Bulk

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

ECCN Code :

EAR99

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-CDFM-F4

Collector Base Voltage (VCBO) :

65V

Package / Case :

55RT

Number of Elements :

2

Mount :

Chassis Mount, Screw

Factory Lead Time :

13 Weeks

Max Power Dissipation :

290W

Operating Temperature :

200°C TJ

Pin Count :

4

Transistor Type :

NPN

Max Frequency :

860MHz

JESD-609 Code :

e0

Collector Emitter Breakdown Voltage :

60V

Pbfree Code :

No

Number of Terminations :

4

Max Collector Current :

15A

Published :

1997

Additional Feature :

High Reliability

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Frequency - Transition :

470MHz~860MHz

Terminal Position :

Dual

Gain :

8.5dB ~ 9.5dB

Transistor Application :

AMPLIFIER

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A 5V

Configuration :

COMMON EMITTER, 2 ELEMENTS