UTV8100B

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Collector Current :

15A

Frequency - Transition :

470MHz~860MHz

Max Power Dissipation :

290W

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

65V

Pin Count :

4

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Number of Pins :

55

Operating Temperature :

200°C TJ

Transistor Element Material :

SILICON

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A 5V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Transistor Type :

NPN

JESD-609 Code :

e0

Terminal Form :

Flat

Pbfree Code :

No

JESD-30 Code :

R-CDFM-F4

Mounting Type :

Chassis Mount

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Factory Lead Time :

13 Weeks

Published :

1997

Gain :

8.5dB ~ 9.5dB

Package / Case :

55RT

RoHS Status :

RoHS Compliant

Mount :

Chassis Mount, Screw

Terminal Finish :

TIN LEAD

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

60V

Number of Terminations :

4

Max Frequency :

860MHz

Additional Feature :

High Reliability

Terminal Position :

Dual

Radiation Hardening :

No

Configuration :

COMMON EMITTER, 2 ELEMENTS