UTV200

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Configuration :

COMMON EMITTER, 2 ELEMENTS

Package / Case :

55JV

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 1A 5V

JESD-30 Code :

R-CDFM-F4

Number of Pins :

55

Number of Terminations :

4

JESD-609 Code :

e0

Terminal Position :

Dual

Radiation Hardening :

No

Frequency - Transition :

470MHz~860MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Collector-Base Capacitance-Max :

36pF

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

50V

Published :

1996

Gain :

8.5dB ~ 9.5dB

Packaging :

Bulk

Max Collector Current :

4.5A

Terminal Finish :

TIN LEAD

Transistor Type :

NPN

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Number of Elements :

2

Max Power Dissipation :

80W

Operating Temperature :

200°C TJ

Pin Count :

4

Pbfree Code :

No

Terminal Form :

Flat

Mounting Type :

Chassis Mount

Additional Feature :

High Reliability

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

28V

Polarity/Channel Type :

NPN

Power - Max :

80W

ECCN Code :

EAR99

Mount :

Chassis Mount, Screw