US6M2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Max Power Dissipation :

1W

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Nominal Vgs :

1.5 V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

ECCN Code :

EAR99

Number of Elements :

2

Power Dissipation :

1W

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

-20V

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Threshold Voltage :

1.5V

Element Configuration :

Dual

Drain to Source Voltage (Vdss) :

30V 20V

Terminal Finish :

TIN COPPER

Peak Reflow Temperature (Cel) :

260

FET Type :

N and P-Channel

Continuous Drain Current (ID) :

1A

Current - Continuous Drain (Id) @ 25°C :

1.5A 1A

Number of Terminations :

6

Dual Supply Voltage :

30V

Turn-Off Delay Time :

25 ns

Published :

2001

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Factory Lead Time :

16 Weeks

Resistance :

340mOhm

JESD-609 Code :

e2

Packaging :

Cut Tape (CT)

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Current Rating :

1.5A

Mount :

Surface Mount

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Package / Case :

6-SMD, Flat Leads

Operating Mode :

ENHANCEMENT MODE

Pin Count :

6

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Base Part Number :

*M2