US6M2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Turn-Off Delay Time :

25 ns

FET Feature :

Standard

Pbfree Code :

yes

Power Dissipation :

1W

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Nominal Vgs :

1.5 V

JESD-609 Code :

e2

Max Power Dissipation :

1W

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Breakdown Voltage :

-20V

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

1.5A 1A

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Termination :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Package / Case :

6-SMD, Flat Leads

Threshold Voltage :

1.5V

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2001

Base Part Number :

*M2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

1.5A

Operating Temperature :

150°C TJ

Number of Elements :

2

Resistance :

340mOhm

Number of Pins :

6

Lead Free :

Lead Free

Terminal Finish :

TIN COPPER

Drain to Source Voltage (Vdss) :

30V 20V

FET Type :

N and P-Channel

Pin Count :

6

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Radiation Hardening :

No

Continuous Drain Current (ID) :

1A

Dual Supply Voltage :

30V

Element Configuration :

Dual

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE