US6M11TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Resistance :

600mOhm

FET Feature :

Logic Level Gate

Terminal Position :

Dual

Max Power Dissipation :

1W

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate to Source Voltage (Vgs) :

10V

Turn On Delay Time :

8 ns

Vgs(th) (Max) @ Id :

1V @ 1mA

Turn-Off Delay Time :

30 ns

Terminal Finish :

TIN COPPER

Drain to Source Breakdown Voltage :

-12V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

6-SMD, Flat Leads

Number of Channels :

2

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

SWITCHING

Radiation Hardening :

No

Number of Elements :

2

JESD-609 Code :

e2

Published :

2016

Current - Continuous Drain (Id) @ 25°C :

1.5A 1.3A

Fall Time (Typ) :

9 ns

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Pins :

6

Drain to Source Voltage (Vdss) :

20V 12V

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 4.5V

Lead Free :

Lead Free

Base Part Number :

*M11

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

150°C TJ

FET Type :

N and P-Channel

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

1.5A

Pin Count :

6

Continuous Drain Current (ID) :

1.3A

Mount :

Surface Mount

Rise Time :

10ns