US6M11TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 4.5V

Max Power Dissipation :

1W

Drain to Source Voltage (Vdss) :

20V 12V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Base Part Number :

*M11

Turn-Off Delay Time :

30 ns

Pin Count :

6

Number of Pins :

6

Turn On Delay Time :

8 ns

Published :

2016

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

1.5A

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Terminal Finish :

TIN COPPER

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate to Source Voltage (Vgs) :

10V

Current - Continuous Drain (Id) @ 25°C :

1.5A 1.3A

Number of Channels :

2

FET Type :

N and P-Channel

Mount :

Surface Mount

Number of Elements :

2

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

10ns

Resistance :

600mOhm

Package / Case :

6-SMD, Flat Leads

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 1mA

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

9 ns

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.3A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-12V