US6M1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.4A 1A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.4A, 10V

Published :

2007

REACH SVHC :

No SVHC

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Current Rating :

1.4A

Turn-Off Delay Time :

25 ns

Width :

1.7mm

FET Type :

N and P-Channel

Number of Terminations :

6

Number of Pins :

6

Rise Time :

8ns

Termination :

SMD/SMT

Lead Free :

Lead Free

Base Part Number :

6M1

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V 20V

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 5V

Gate to Source Voltage (Vgs) :

-12V

Continuous Drain Current (ID) :

1A

Terminal Finish :

Tin/Copper (Sn/Cu)

Mounting Type :

Surface Mount

Dual Supply Voltage :

30V

Packaging :

Tape and Reel (TR)

Length :

2mm

Number of Elements :

2

Radiation Hardening :

No

Power Dissipation :

1W

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 10V

Fall Time (Typ) :

10 ns

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Polarity/Channel Type :

N-Channel

Resistance :

280mOhm

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Package / Case :

6-SMD, Flat Leads

Nominal Vgs :

2.5 V

Height :

770μm

Pbfree Code :

yes

Max Power Dissipation :

1W

JESD-609 Code :

e2