US6M1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Fall Time (Typ) :

10 ns

Transistor Element Material :

SILICON

Rise Time :

8ns

Height :

770μm

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Pins :

6

Drain to Source Voltage (Vdss) :

30V 20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

FET Type :

N and P-Channel

Termination :

SMD/SMT

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

30V

Transistor Application :

SWITCHING

Pbfree Code :

yes

JESD-609 Code :

e2

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 5V

Peak Reflow Temperature (Cel) :

260

Current Rating :

1.4A

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.4A, 10V

Power Dissipation :

1W

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

1A

Pin Count :

6

Current - Continuous Drain (Id) @ 25°C :

1.4A 1A

Base Part Number :

6M1

Published :

2007

Drain to Source Breakdown Voltage :

-20V

Package / Case :

6-SMD, Flat Leads

Time@Peak Reflow Temperature-Max (s) :

10

REACH SVHC :

No SVHC

Terminal Finish :

Tin/Copper (Sn/Cu)

Packaging :

Tape and Reel (TR)

Width :

1.7mm

Turn-Off Delay Time :

25 ns

Resistance :

280mOhm

Length :

2mm

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 10V

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

-12V

Mounting Type :

Surface Mount

Nominal Vgs :

2.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1W

Vgs(th) (Max) @ Id :

2.5V @ 1mA