US6M1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.4A 1A

Terminal Finish :

Tin/Copper (Sn/Cu)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Base Part Number :

6M1

Max Power Dissipation :

1W

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 10V

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.4A, 10V

Width :

1.7mm

Fall Time (Typ) :

10 ns

Pbfree Code :

yes

Power Dissipation :

1W

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Operating Temperature :

150°C TJ

Number of Elements :

2

Drain to Source Breakdown Voltage :

-20V

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Voltage (Vdss) :

30V 20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

2.5V @ 1mA

REACH SVHC :

No SVHC

Mount :

Surface Mount

Mounting Type :

Surface Mount

Rise Time :

8ns

Number of Pins :

6

Radiation Hardening :

No

Height :

770μm

Resistance :

280mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

-12V

Current Rating :

1.4A

Dual Supply Voltage :

30V

Package / Case :

6-SMD, Flat Leads

Factory Lead Time :

16 Weeks

JESD-609 Code :

e2

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 5V

Pin Count :

6

FET Type :

N and P-Channel

Turn-Off Delay Time :

25 ns

Length :

2mm

Nominal Vgs :

2.5 V

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

1A

Peak Reflow Temperature (Cel) :

260