UPA811T-A

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Voltage - Collector Emitter Breakdown (Max) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Operating Temperature :

150°C TJ

Polarity :

NPN

Frequency - Transition :

8GHz

Collector Base Voltage (VCBO) :

20V

Max Collector Current :

35mA

Max Power Dissipation :

200mW

Noise Figure (dB Typ @ f) :

1.9dB @ 2GHz

Collector Emitter Voltage (VCEO) :

10V

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 3V

Power - Max :

200mW

Collector Emitter Breakdown Voltage :

10V

Packaging :

Bulk

Transistor Type :

2 NPN (Dual)

Supplier Device Package :

SOT-363

Min Operating Temperature :

-65°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector (Ic) (Max) :

35mA

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Continuous Collector Current :

35mA

Number of Pins :

6

Mount :

Surface Mount

Gain :

7.5dB