TT8K11TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SMD, Flat Lead

JESD-30 Code :

R-PDSO-F8

Rds On (Max) @ Id, Vgs :

71m Ω @ 3A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 5V

FET Feature :

Logic Level Gate, 4V Drive

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Number of Elements :

2

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.109Ohm

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

3A

Published :

2011

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

3A

Factory Lead Time :

10 Weeks

Vgs(th) (Max) @ Id :

2.5V @ 1A

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 10V

Reach Compliance Code :

not_compliant

Power - Max :

1W