TT8J21TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Tin/Copper (Sn/Cu)

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

30ns

Number of Terminations :

8

JESD-609 Code :

e2

Pulsed Drain Current-Max (IDM) :

10A

Pin Count :

8

Turn On Delay Time :

9 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

Gate to Source Voltage (Vgs) :

10V

Radiation Hardening :

No

Contact Plating :

Copper, Tin

Drain to Source Breakdown Voltage :

20V

Resistance :

280mOhm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

*J21

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

68m Ω @ 2.5A, 4.5V

Max Power Dissipation :

650mW

Turn-Off Delay Time :

120 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.5A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

20V

FET Type :

2 P-Channel (Dual)

Package / Case :

8-SMD, Flat Lead

Operating Temperature :

150°C TJ

Fall Time (Typ) :

30 ns

Number of Pins :

8

Vgs(th) (Max) @ Id :

1V @ 1mA

Number of Elements :

2

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Power Dissipation :

1.25W

Input Capacitance (Ciss) (Max) @ Vds :

1270pF @ 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)