TT8J2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

84m Ω @ 2.5A, 10V

Transistor Element Material :

SILICON

Fall Time (Typ) :

14 ns

Peak Reflow Temperature (Cel) :

260

FET Type :

2 P-Channel (Dual)

Turn On Delay Time :

7 ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Terminations :

8

Number of Elements :

2

Number of Pins :

8

Radiation Hardening :

No

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Drain Current (ID) :

2.5A

Power Dissipation :

1.25W

Mount :

Surface Mount

Turn-Off Delay Time :

35 ns

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Rise Time :

20ns

Drain to Source Breakdown Voltage :

-30V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 5V

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Base Part Number :

*J2

Operating Temperature :

150°C TJ

Terminal Finish :

TIN COPPER

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

10A

Factory Lead Time :

10 Weeks

Transistor Application :

SWITCHING

Published :

2009

ECCN Code :

EAR99

Max Power Dissipation :

1.25W

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e2