TT8J13TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Factory Lead Time :

10 Weeks

Continuous Drain Current (ID) :

2.5A

JESD-30 Code :

R-PDSO-F8

FET Feature :

Logic Level Gate, 1.5V Drive

Package / Case :

8-SMD, Flat Lead

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 6V

Pulsed Drain Current-Max (IDM) :

5A

Drain-source On Resistance-Max :

0.062Ohm

Max Power Dissipation :

1W

Transistor Element Material :

SILICON

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2011

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

150°C TJ

Number of Elements :

2

DS Breakdown Voltage-Min :

12V

FET Type :

2 P-Channel (Dual)

ECCN Code :

EAR99

Pin Count :

8

Power - Max :

1W

Drain to Source Voltage (Vdss) :

12V

Vgs(th) (Max) @ Id :

1V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

62m Ω @ 2.5A, 4.5V