TPD3215M

Manufacturer :

Transphorm

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

600V

FET Type :

2 N-Channel (Half Bridge)

FET Feature :

GaNFET (Gallium Nitride)

Published :

2016

Input Capacitance (Ciss) (Max) @ Vds :

2260pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 8V

Power - Max :

470W

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

34m Ω @ 30A, 8V

Mounting Type :

Through Hole

Package / Case :

Module

Reach Compliance Code :

Unknown

Packaging :

Bulk

Pbfree Code :

yes