TP65H070LDG
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- Mfr.Part #
- TP65H070LDG
- Manufacturer
- Transphorm
- Package / Case
- 3-PowerDFN
- Datasheet
- Download
- Description
- GANFET N-CH 650V 25A 3PQFN
- Stock
- 288
- In Stock ：
- 288
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- Manufacturer :
- Transphorm
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 12 Weeks
- Drain to Source Voltage (Vdss) :
- 650V
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 400V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- TP65H070L
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 9.3nC @ 10V
- Packaging :
- Tube
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 16A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Vgs(th) (Max) @ Id :
- 4.8V @ 700μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- 3-PowerDFN
- Power Dissipation-Max :
- 96W Tc
- Datasheets
- TP65H070LDG
N-Channel Tube 85m Ω @ 16A, 10V ±20V 600pF @ 400V 9.3nC @ 10V 650V 3-PowerDFN
TP65H070LDG Overview
A device's maximum input capacitance is 600pF @ 400V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
TP65H070LDG Features
a 650V drain to source voltage (Vdss)
TP65H070LDG Applications
There are a lot of Transphorm
TP65H070LDG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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