TP65H050G4WS

Manufacturer :

Transphorm

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Transphorm

Packaging :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

1000 pF @ 400 V

Rise Time :

11.3 ns

Number of Channels :

1 Channel

Brand :

Transphorm

RoHS :

Details

Vgs(th) (Max) @ Id :

4.8V @ 700μA

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

34A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Package / Case :

TO-247-3

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

60mOhm @ 22A, 10V

Channel Mode :

Enhancement

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs (Max) :

±20V

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT

Product Status :

Active

Configuration :

Single

Base Product Number :

TP65H050

Mounting Type :

Through Hole

Subcategory :

MOSFETs

Power Dissipation (Max) :

119W (Tc)

Transistor Polarity :

N-Channel

Supplier Device Package :

TO-247-3

Product Category :

MOSFET

Product Type :

MOSFET

Series :

SuperGaN?

Gate Charge (Qg) (Max) @ Vgs :

24 nC @ 10 V