TP65H035G4WS

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Mfr.Part #
TP65H035G4WS
Manufacturer
Transphorm
Package / Case
TO-247-3
Datasheet
Download
Description
GANFET N-CH 650V 46.5A TO247-3
Stock
813
In Stock :
813

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Manufacturer :
Transphorm
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
Transphorm
Package / Case :
TO-247-3
Supplier Device Package :
TO-247-3
Rise Time :
10 ns
Product Type :
MOSFET
Rds On (Max) @ Id, Vgs :
41mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
1500 pF @ 400 V
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Tradename :
SuperGaN
Product Category :
MOSFET
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
650 V
Transistor Polarity :
N-Channel
Channel Mode :
Enhancement
Operating Temperature :
-55°C ~ 150°C
RoHS :
Details
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Vgs(th) (Max) @ Id :
4.8V @ 1mA
Subcategory :
MOSFETs
FET Feature :
-
Product Status :
Active
Gate Charge (Qg) (Max) @ Vgs :
22 nC @ 0 V
Series :
-
Drive Voltage (Max Rds On, Min Rds On) :
10V
Base Product Number :
TP65H035
Manufacturer :
Transphorm
Package :
Tube
Mounting Type :
Through Hole
Packaging :
Tube
Power Dissipation (Max) :
156W (Tc)
Current - Continuous Drain (Id) @ 25°C :
46.5A (Tc)
Datasheets
TP65H035G4WS
Introducing Transistors - FETs, MOSFETs - Single Transphorm TP65H035G4WS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C ~ 150°C, Mounting Type:Through Hole, TP65H035G4WS pinout, TP65H035G4WS datasheet PDF, TP65H035G4WS amp .Beyond Transistors - FETs, MOSFETs - Single Transphorm TP65H035G4WS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Transphorm TP65H035G4WS


N-Channel Tube 41mOhm @ 30A, 10V ±20V 1500 pF @ 400 V 22 nC @ 0 V 650 V TO-247-3

TP65H035G4WS Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1500 pF @ 400 V.This transistor requires a drain-source voltage (Vdss) of 650 V.

TP65H035G4WS Features


a 650 V drain to source voltage (Vdss)


TP65H035G4WS Applications


There are a lot of Transphorm
TP65H035G4WS applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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