TP65H035G4WS

Manufacturer :

Transphorm

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

SuperGaN

Power Dissipation (Max) :

156W (Tc)

Manufacturer :

Transphorm

Product Status :

Active

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 0 V

Vgs(th) (Max) @ Id :

4.8V @ 1mA

Rds On (Max) @ Id, Vgs :

41mOhm @ 30A, 10V

Maximum Operating Temperature :

+ 150 C

Packaging :

Tube

Transistor Type :

1 N-Channel

RoHS :

Details

FET Type :

N-Channel

Base Product Number :

TP65H035

Mounting Style :

Through Hole

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

46.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Type :

Through Hole

Brand :

Transphorm

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 400 V

Product Type :

MOSFET

Channel Mode :

Enhancement

Operating Temperature :

-55°C ~ 150°C

FET Feature :

-

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Package / Case :

TO-247-3

Package :

Tube

Drain to Source Voltage (Vdss) :

650 V

Rise Time :

10 ns

Subcategory :

MOSFETs

Series :

-

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-247-3