TP65H015G5WS

Manufacturer :

Transphorm

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Power Dissipation (Max) :

266W (Tc)

Series :

SuperGaN?

Brand :

Transphorm

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Package :

Tube

Supplier Device Package :

TO-247-3

Vgs(th) (Max) @ Id :

4.8V @ 2mA

Current - Continuous Drain (Id) @ 25°C :

93A (Tc)

Product Category :

MOSFET

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

100 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Minimum Operating Temperature :

- 55 C

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

5218 pF @ 400 V

Maximum Operating Temperature :

+ 150 C

Subcategory :

MOSFETs

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

650 V

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

RoHS :

Details

FET Type :

N-Channel

Configuration :

Single

Manufacturer :

Transphorm

Number of Channels :

1 Channel

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

18mOhm @ 60A, 10V

Product Type :

MOSFET

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

Rise Time :

20 ns