TP65H050G4BS

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Mfr.Part #
TP65H050G4BS
Manufacturer
Transphorm
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
650 V 34 A GAN FET
Stock
329
In Stock :
329

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Manufacturer :
Transphorm
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Vgs (Max) :
±20V
Product Type :
MOSFET
Subcategory :
MOSFETs
Mounting Type :
Surface Mount
Number of Channels :
1 Channel
Product Category :
MOSFET
Manufacturer :
Transphorm
Product Status :
Active
Rds On (Max) @ Id, Vgs :
60mOhm @ 22A, 10V
Maximum Operating Temperature :
+ 150 C
Package :
Tube
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
1000 pF @ 400 V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) :
10V
Power Dissipation (Max) :
119W (Tc)
Supplier Device Package :
TO-263
Base Product Number :
TP65H050
Vgs(th) (Max) @ Id :
4.8V @ 700μA
FET Feature :
-
Mounting Style :
SMD/SMT
Operating Temperature :
-55°C ~ 150°C (TJ)
Channel Mode :
Enhancement
Gate Charge (Qg) (Max) @ Vgs :
24 nC @ 10 V
Brand :
Transphorm
Drain to Source Voltage (Vdss) :
650 V
Rise Time :
11.3 ns
RoHS :
Details
Transistor Polarity :
N-Channel
Packaging :
Bulk
Minimum Operating Temperature :
- 55 C
Series :
SuperGaN?
Datasheets
TP65H050G4BS
Introducing Transistors - FETs, MOSFETs - Single Transphorm TP65H050G4BS from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C ~ 150°C (TJ), TP65H050G4BS pinout, TP65H050G4BS datasheet PDF, TP65H050G4BS amp .Beyond Transistors - FETs, MOSFETs - Single Transphorm TP65H050G4BS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 60mOhm @ 22A, 10V ±20V 1000 pF @ 400 V 24 nC @ 10 V 650 V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TP65H050G4BS Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1000 pF @ 400 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650 V.

TP65H050G4BS Features


a 650 V drain to source voltage (Vdss)


TP65H050G4BS Applications


There are a lot of Transphorm
TP65H050G4BS applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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