TP65H050G4BS

Manufacturer :

Transphorm

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Style :

SMD/SMT

Product Category :

MOSFET

Package :

Tube

Transistor Polarity :

N-Channel

FET Type :

N-Channel

RoHS :

Details

Channel Mode :

Enhancement

Mounting Type :

Surface Mount

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

1000 pF @ 400 V

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

24 nC @ 10 V

Base Product Number :

TP65H050

Supplier Device Package :

TO-263

Drain to Source Voltage (Vdss) :

650 V

Packaging :

Bulk

Number of Channels :

1 Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Subcategory :

MOSFETs

Power Dissipation (Max) :

119W (Tc)

Manufacturer :

Transphorm

Rds On (Max) @ Id, Vgs :

60mOhm @ 22A, 10V

Current - Continuous Drain (Id) @ 25°C :

34A (Tc)

Vgs (Max) :

±20V

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Brand :

Transphorm

Rise Time :

11.3 ns

Series :

SuperGaN?

Vgs(th) (Max) @ Id :

4.8V @ 700μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB