TK35S04K3L(T6L1,NQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

58W Tc

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Number of Elements :

1

Supplier Device Package :

DPAK+

Rds On (Max) @ Id, Vgs :

10.3mOhm @ 17.5A, 10V

Series :

U-MOSIV

Published :

2009

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

175°C

Input Capacitance :

1.37nF

Power Dissipation :

58W

Operating Temperature :

175°C TJ

Current - Continuous Drain (Id) @ 25°C :

35A Ta

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 1mA

Number of Pins :

3

Vgs (Max) :

±20V

Turn-Off Delay Time :

35 ns

Rds On Max :

10.3 Ω

Fall Time (Typ) :

12 ns

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

19 ns

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

35A

Rise Time :

9ns

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V