TK35E08N1,S1X

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Mfr.Part #
TK35E08N1,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 80V 55A TO220
Stock
12,480
In Stock :
12,480

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
55A
Drain to Source Voltage (Vdss) :
80V
Published :
2013
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Rds On (Max) @ Id, Vgs :
12.2m Ω @ 17.5A, 10V
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 300μA
Series :
U-MOSVIII-H
FET Type :
N-Channel
Operating Temperature :
150°C TJ
RoHS Status :
RoHS Compliant
Package / Case :
TO-220-3
Power Dissipation-Max :
72W Tc
Input Capacitance (Ciss) (Max) @ Vds :
1700pF @ 40V
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
12 Weeks
Datasheets
TK35E08N1,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK35E08N1,S1X from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-220-3, TK35E08N1,S1X pinout, TK35E08N1,S1X datasheet PDF, TK35E08N1,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK35E08N1,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK35E08N1,S1X


N-Channel Tube 12.2m Ω @ 17.5A, 10V ±20V 1700pF @ 40V 25nC @ 10V 80V TO-220-3

TK35E08N1,S1X Overview


The maximum input capacitance of this device is 1700pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 55A.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TK35E08N1,S1X Features


a continuous drain current (ID) of 55A
a 80V drain to source voltage (Vdss)


TK35E08N1,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK35E08N1,S1X applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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