TK35A08N1,S4X
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- Mfr.Part #
- TK35A08N1,S4X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 35A TO220SIS
- Stock
- 5,147
- In Stock ：
- 5,147
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 40V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 80V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 12.2m Ω @ 17.5A, 10V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 8.8 ns
- Factory Lead Time :
- 12 Weeks
- Rise Time :
- 11ns
- Power Dissipation-Max :
- 30W Tc
- Drain Current-Max (Abs) (ID) :
- 55A
- Mount :
- Through Hole
- Weight :
- 6.000006g
- Number of Pins :
- 3
- Turn On Delay Time :
- 28 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Operating Temperature :
- 150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 300μA
- Number of Channels :
- 1
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 35 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Series :
- U-MOSVIII-H
- Continuous Drain Current (ID) :
- 35A
- Published :
- 2014
- Datasheets
- TK35A08N1,S4X
N-Channel Tube 12.2m Ω @ 17.5A, 10V ±20V 1700pF @ 40V 25nC @ 10V 80V TO-220-3 Full Pack
TK35A08N1,S4X Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1700pF @ 40V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 35A amps.A device can conduct a maximum continuous current of [55A] according to its drain current.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 28 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 80V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
TK35A08N1,S4X Features
a continuous drain current (ID) of 35A
the turn-off delay time is 35 ns
a 80V drain to source voltage (Vdss)
TK35A08N1,S4X Applications
There are a lot of Toshiba Semiconductor and Storage
TK35A08N1,S4X applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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