TK35A65W,S5X
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- Mfr.Part #
- TK35A65W,S5X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 35A TO220SIS
- Stock
- 16
- In Stock ：
- 16
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Drain to Source Voltage (Vdss) :
- 650V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 3.5V @ 2.1mA
- Factory Lead Time :
- 16 Weeks
- Operating Temperature :
- 150°C TJ
- Series :
- DTMOSIV
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Ta
- Continuous Drain Current (ID) :
- 35A
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 300V
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 8 ns
- Weight :
- 6.000006g
- Published :
- 2014
- Packaging :
- Tube
- Rise Time :
- 30ns
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 150 ns
- Power Dissipation-Max :
- 50W Tc
- Number of Pins :
- 3
- Turn On Delay Time :
- 70 ns
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3 Full Pack
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 17.5A, 10V
- Datasheets
- TK35A65W,S5X
N-Channel Tube 80m Ω @ 17.5A, 10V ±30V 4100pF @ 300V 100nC @ 10V 650V TO-220-3 Full Pack
TK35A65W,S5X Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4100pF @ 300V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 35A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 150 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 70 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
TK35A65W,S5X Features
a continuous drain current (ID) of 35A
the turn-off delay time is 150 ns
a 650V drain to source voltage (Vdss)
TK35A65W,S5X Applications
There are a lot of Toshiba Semiconductor and Storage
TK35A65W,S5X applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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