TK35N65W,S1F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 300V

Operating Temperature :

150°C TJ

RoHS Status :

RoHS Compliant

Supplier Device Package :

TO-247

Input Capacitance :

4.1nF

Power Dissipation-Max :

270W Tc

Drain to Source Resistance :

68mOhm

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

35A

Current - Continuous Drain (Id) @ 25°C :

35A Ta

Min Operating Temperature :

-55°C

Series :

DTMOSIV

Max Operating Temperature :

150°C

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

650V

Vgs(th) (Max) @ Id :

3.5V @ 2.1mA

Mounting Type :

Through Hole

FET Type :

N-Channel

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

650V

Weight :

38.000013g

Number of Pins :

3

Fall Time (Typ) :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Turn On Delay Time :

70 ns

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Package / Case :

TO-247-3

Turn-Off Delay Time :

150 ns

Rds On Max :

80 mΩ

Published :

2014

Number of Channels :

1

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

80mOhm @ 17.5A, 10V

Packaging :

Tube

Rise Time :

30ns