TK35N65W5,S1F

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Mfr.Part #
TK35N65W5,S1F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 650V 35A TO247
Stock
10,764
In Stock :
10,764

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Fall Time (Typ) :
8 ns
Rds On (Max) @ Id, Vgs :
95m Ω @ 17.5A, 10V
Continuous Drain Current (ID) :
35A
Rise Time :
55ns
Operating Temperature :
150°C TJ
Number of Channels :
1
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
115nC @ 10V
Radiation Hardening :
No
Package / Case :
TO-247-3
Power Dissipation-Max :
270W Tc
Mount :
Through Hole
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
4.5V @ 2.1mA
Vgs (Max) :
±30V
Published :
2014
Current - Continuous Drain (Id) @ 25°C :
35A Ta
Element Configuration :
Single
Turn-Off Delay Time :
150 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
110 ns
Drain to Source Breakdown Voltage :
650V
RoHS Status :
RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 300V
Series :
DTMOSIV
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
16 Weeks
Number of Pins :
3
FET Type :
N-Channel
Weight :
38.000013g
Datasheets
TK35N65W5,S1F
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK35N65W5,S1F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Channels:1, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, TK35N65W5,S1F pinout, TK35N65W5,S1F datasheet PDF, TK35N65W5,S1F amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK35N65W5,S1F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK35N65W5,S1F


N-Channel Tube 95m Ω @ 17.5A, 10V ±30V 4100pF @ 300V 115nC @ 10V TO-247-3

TK35N65W5,S1F Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4100pF @ 300V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 35A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 150 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 110 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TK35N65W5,S1F Features


a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 150 ns


TK35N65W5,S1F Applications


There are a lot of Toshiba Semiconductor and Storage
TK35N65W5,S1F applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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