TK35N65W5,S1F
- Mfr.Part #
- TK35N65W5,S1F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 35A TO247
- Stock
- 10,764
- In Stock :
- 10,764
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 17.5A, 10V
- Continuous Drain Current (ID) :
- 35A
- Rise Time :
- 55ns
- Operating Temperature :
- 150°C TJ
- Number of Channels :
- 1
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- Radiation Hardening :
- No
- Package / Case :
- TO-247-3
- Power Dissipation-Max :
- 270W Tc
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 2.1mA
- Vgs (Max) :
- ±30V
- Published :
- 2014
- Current - Continuous Drain (Id) @ 25°C :
- 35A Ta
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 150 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 110 ns
- Drain to Source Breakdown Voltage :
- 650V
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 300V
- Series :
- DTMOSIV
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 16 Weeks
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Weight :
- 38.000013g
- Datasheets
- TK35N65W5,S1F

N-Channel Tube 95m Ω @ 17.5A, 10V ±30V 4100pF @ 300V 115nC @ 10V TO-247-3
TK35N65W5,S1F Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4100pF @ 300V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 35A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 150 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 110 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TK35N65W5,S1F Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 150 ns
TK35N65W5,S1F Applications
There are a lot of Toshiba Semiconductor and Storage
TK35N65W5,S1F applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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